STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET

Rozměr: px

Začít zobrazení ze stránky:

Download "STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET"

Luboš Jelínek
před 5 lety
Počet zobrazení:

1 STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z V 900 V 900 V 900 V < 4.8 Ω < 4.8 Ω < 4.8 Ω < 4.8 Ω 3A 3A 3A 3A 90 W 25 W 90 W 90 W TYPICAL R DS (on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO DPAK 3 TO-220FP IPAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to eure a very good dv/dt capability for the most demanding applicatio. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP3NK90Z P3NK90Z TO-220 TUBE STP3NK90ZFP P3NK90ZFP TO-220FP TUBE STD3NK90ZT4 D3NK90Z DPAK TAPE & REEL STD3NK90Z-1 D3NK90Z IPAK TUBE November 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/13

2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 V DS Drain-source Voltage (V GS =0) 900 V V DGR Drain-gate Voltage (R GS =20kΩ) 900 V V GS Gate- source Voltage ± 30 V I D Drain Current (continuous) at T C = 25 C 3 3 (*) 3 A I D Drain Current (continuous) at T C = 100 C (*) 1.89 A I DM ( ) Drain Current (pulsed) (*) 12 A P TOT Total Dissipation at T C = 25 C W Derating Factor W/ C V ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ V ISO Iulation Withstand Voltage (DC) V T j T stg ( ) Pulse width limited by safe operating area (1) I SD 3A, di/dt 200A/µs, V DD V (BR)DSS, T j T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Operating Junction Temperature Storage Temperature AVALANCHE CHARACTERISTICS -55to150 C TO-220 TO-220FP DPAK IPAK Rthj-case Thermal Resistance Junction-case Max C/W Rthj-amb Thermal Resistance Junction-ambient Max C/W T l Maximum Lead Temperature For Soldering Purpose 300 C Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive 3 A (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 C, I D =I AR,V DD =50V) 180 mj GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage traients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13

3 ELECTRICAL CHARACTERISTICS (T CASE =25 C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V (BR)DSS Drain-source I D =1mA,V GS = V Breakdown Voltage I DSS I GSS DYNAMIC SWITCHING ON SWITCHING OFF Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (V DS =0) V DS = Max Rating V DS = Max Rating, T C = 125 C 1 50 V GS = ± 30 V ±10 µa V GS(th) Gate Threshold Voltage V DS =V GS,I D =50µA V R DS(on) Static Drain-source On V GS =10V,I D = 1.5 A Ω Resistance Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs (1) Forward Traconductance V DS =15V, I D = 1.5 A 2.7 S C iss C oss C rss C oss eq. (3) Input Capacitance Output Capacitance Reverse Trafer Capacitance Equivalent Output Capacitance V DS =25V,f=1MHz,V GS = V GS =0V,V DS =0Vto400V 34 pf Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(on) t r Turn-on Delay Time Rise Time V DD =450V,I D = 1.5 A R G = 4.7Ω V GS =10V (Resistive Load see, Figure 3) 18 7 Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =720V,I D =3A, V GS =10V Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(off) t f Turn-off Delay Time Fall Time V DD = 720 V, I D = 1.5 A R G =4.7ΩV GS =10V (Resistive Load see, Figure 3) t r(voff) t f t c Off-voltage Rise Time Fall Time Cross-over Time V DD = 450V, I D =3A, R G =4.7Ω, V GS = 10V (Inductive Load see, Figure 5) µa µa pf pf pf nc nc nc SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD Source-drain Current 3 A I SDM (2) Source-drain Current (pulsed) 12 A V SD (1) Forward On Voltage I SD = 3 A, V GS =0 1.6 V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A, di/dt = 100A/µs V DD =100V,T j =150 C (see test circuit, Figure 5) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. C oss eq. is defined as a cotant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS µc A 3/13

4 Safe Operating Area For TO-220/DPAK/IPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK Thermal Impedance For TO-220FP Output Characteristics Trafer Characteristics 4/13

5 Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13

6 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/13

7 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13

8 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 C F G H2 D A E L2 G1 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 8/13

9 TO-220FP MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L L Ø H G B D A E L6 L7 L3 F G1 F1 L2 L5 F2 L /13

10 TO-252 (DPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A A B B C C D E G H L L V2 0 o 8 o 0 o 0 o P032P_B 10/13

11 TO-251 (IPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A A B B B B B C C D E G H L L L H A1 C2 A3 A C L2 D L E = = B2 = = G = = B3 B6 B B5 L E 11/13

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimeio are in millimeters All dimeio areinmillimeters TAPE AND REEL SHIPMENT (suffix T4 )* REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.

12 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimeio are in millimeters All dimeio areinmillimeters TAPE AND REEL SHIPMENT (suffix T4 )* REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B B D D E F K P P P R W BASE QTY BULK QTY * on sales type 12/13

13 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 13/13

Podobné dokumenty

technický list TRANSIL TM 1.5KE6V8A/440A 1.5KE6V8CA/440CA www.gme.cz str 1

technický list TRANSIL TM 1.5KE6V8A/440A 1.5KE6V8CA/440CA www.gme.cz str 1 Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 186 00 Praha 8 zákaznická linka: 840 50 60 70 technický list 1.5KE6V8A/440A 1.5KE6V8CA/440CA TRANSIL TM FEATURES PEAK PULSE POWER : 1500 W (10/1000µs)